High-Power Euv Light Source Project
J. Y. Chen1*, W. C. Chang2, F. H. Chao4, A. Y. Chen6, C. H. Chen1, C. L. Chen1, P. J. Chou1, T. Y. Chung5, J. C. Huang5, H. T. Jan6, M. E. Lee7, C. K. Yang5
1Light Source Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
2Institute of Physics, Academia Sinica, Taipei, Taiwan
3Video Collaboration Division, Logitech Far East Ltd., Hsinchu, Taiwan
4Radiation and Operation Safety Diivision, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
5Instrumentation Development Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
6Experimental Facility Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
7Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan
* presenting author:Jia-Ye Chen, email:chen.jiaye@nsrrc.org.tw
At current 7-nm semiconductor manufacturing, the Laser-Produced Plasmas (LPP) Extreme Ultraviolet (EUV) wafer scanner provided by ASML can merely have 120-W output power, not enough to catch the break-even condition, 250 W, of industrial requirement. Meanwhile, the optical system contamination resulted from laser-produced plasmas causes an extremely short lifetime of whole wafer scanner system. Hence, an alternative for high-power EUV light source is needed, instead of LPP EUV light source.
Based on beam manipulation technology, it is possible to create microbunching structure in an electron beam. After microbunching electrons passed through the downstream undulator, the high-power EUV photons were generated through harmonic generation mechanism. There are several types of beam manipulation technology, such as CHG, HGHG and EEHG. However, current research groups who operated beam manipulation faced the same trouble, unable to measure the electrons’ microbunching structure in time domain or space domain directly. Possible microbunching structure can only be speculated based on the output spectrum. Currently, the designs of beam manipulation system relied on the simulation results. In order to match the industry requirement, the first priority of this project is to develop a beam diagnosis scheme for measuring the electron microbunching structure directly, and based on the measured structure to improve the design of beam manipulation system.
This project proposes a novel idea to measure the electron microbunching structure. This novel idea is based on the backward Compton scattering (BCS). The electron beam collides head-on with photon beam generated by a laser in the drift space. This process can implant microbunching structure on scattered photons. We can obtain the microbunching structure of electron beam by measuring the microbunching photon beam using an optical autocorrelator. We propose to develop and test the optical equipment by performing the backward Compton scattering on linear accelerator of Taiwan Photon Source at NSRRC and perform the real experiment at SPring-8, Japan.


Keywords: EUV, lithography, light source