Electrical Properties of MoS2 Deposited on SiO2 Substrates with and Without (NH4)2Sx Treatment
Ting-Hong Su (蘇庭鋐)1*, Yow-Jon Lin (林祐仲)1
1Institute of Photonics, National Changhua University of Education, Changhua, Taiwan
* presenting author:Yow-Jon Lin, email:rzr2390@yahoo.com.tw
Few-layer MoS2 prepared by the chemical vapor deposition method is deposited on SiO2 samples with/without (NH4)2Sx treatment in order to experimentally study the mechanism of conduction-type conversion in MoS2. The MoS2 thin film deposited on a SiO2 substrate with (NH4)2Sx treatment shows n-type behavior, whereas the MoS2 thin film deposited on a SiO2 substrate without (NH4)2Sx treatment exhibits p-type behavior. Experimental identification confirms that n-type conversion is due to a combined effect of the broken Si-O bonds and the formation of Si-S bonds at the SiO2 surface that results in the removal of oxygen dangling bonds and a change in the MoS2-SiO2 interaction.

Keywords: Two-dimensional materials, Molybdenum disulfide, Electrical property, Interface modification