Magnetic Quantization in Monolayer GaAs
Hsien-Ching Chung1*, Ching-Hong Ho2, Cheng-Peng Chang2, Chun-Nan Chen3, Chih-Wei Chiu1, Ming-Fa Lin4
1Department of Physics, National Kaohsiung Normal University, Kaohsiung, Taiwan
2Center for General Education, Tainan University of Technology, Tainan, Taiwan
3Quantum Engineering Laboratory, Department of Physics, Tamkang University, Tamsui, Taiwan
4Department of Physics, National Cheng Kung University, Tainan, Taiwan
* presenting author:Hsien-Ching Chung, email:hsienching.chung@gmail.com
Since 2004, the discovery of graphene has opened the possibility of two-dimensional materials both in technological applications and fundamental researches. However, the gapless feature limits the applications of pristine graphene. Recently, researchers have new opportunities and challenges for post-graphene two-dimensional nanomaterials, such as silicene (Si), germanene (Ge), and tinene (Sn), owing to the sufficiently large energy gap (of the size comparable to the thermal energy at room temperature). Apart from the group IV elements, the buckled honeycomb lattices of the binary compositions of group III-V elements have been proposed as a new class of post-graphene two-dimensional nanomaterials. In this study, the generalized tight-binding model including the spin-orbital interactions is utilized to investigate the essential properties of monolayer GaAs. The magnetic quantization, band structure, wave function, and density of states are discussed in detail. (One of us (Hsien-Ching Chung) thanks Ming-Hui Chung and Su-Ming Chen for financial support. This work was supported in part by the Ministry of Science and Technology of Taiwan under grant number MOST 105-2811-M-017-003.)


Keywords: two-dimensional materials, GaAs, magneto-electronic property, Landau quantization, post-graphene