Recent Progress of GaN Nanostructure Led
Che-Yu Liu1, Huang-Yu Lin1, Sheng-Wen Wang1, Jhih-Kai Huang1, Tsung Sheng Kao1, Huang-Ming Chen1, Chien-Chung Lin2, Hao-Chung Kuo1*
1Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan
2Institute of Photonic System, National Chiao Tung University, Tainan, Taiwan
* presenting author:Hao-Chung Kuo, email:hckuo@faculty.nctu.edu.tw
GaN-based light-emitting diodes (LEDs) with nanostructure have been attracted much attention because the nanostructure can not only improve the performance of LED but also enhance the interaction between InGaN-based quantum well and phosphor. Via specialized nano-sphere and integration of nano-imprint lithography technologies, we are able to produce the specific photonic crystal on a large scale and fabricate the nano-ring LEDs with different wall width. The effective bandgaps of nano-ring LEDs can be precisely tuned by the thinned wall. To develop environmental friendly product, the novel nontoxicity carbon and porous silicon quantum dots (QDs) phosphor were applied to produce the high brightness liquid-type white LEDs with excellent color quality. Through aerosol jet (AJ) technology, the micro-scale QDs droplet can be flexible sprayed on the micro-LED surface and directly generate red, green and blue light-emission. In order to enhance the color-conversion efficiency of the existing QDs, the QDs droplet were sprayed into the LED with nanostructure. Via light extraction and non-radiative energy transfer mechanisms, the QDs color-conversion efficiency indeed be improved by up to 32.4%. Finally, we combine the above ideals and figure out the next-generation micro-display.


Keywords: GaN, light-emitting diode, quantum dot, aerosol jet, micro-display