Ag Capping Layers Inducing Magnetic Anisotropy Enhancement of Ni/√3×√3R30°- Ag/Si(111)
Yu-Ting Chow1*, Bin-Han Jiang1, Cheng-Hsun-Tony Chang1, Jyh-Shen Tsay1
1Physics, National Taiwan Normal University, Taipei, Taiwan
* presenting author:Yu Ting Chow, email:80241006S@ntnu.edu.tw
Because of the promising applications of new possible functionalities in semiconductor technology, metal-semiconductor interfaces have attracted considerable attention. Combined surface magneto-optic Kerr effect and Auger electron spectroscopy are employed to study x ML Ag on as-deposited and annealed Ni/√3×√3R30°- Ag/Si(111). The easy axis of both as-deposited and annealed Ni/√3×√3R30°- Ag/Si(111) are in the surface plane. When only 0.6 ML Ag is deposited, a significant enhancement of longitudinal hysteresis loops can be observed. From the calculations, the effective magnetic anisotropy increases 0.208 MJ/m³ after 0.6 ML Ag is capped. Furthermore, the enhancement of magnetic anisotropy for as-deposited case is not as obvious as annealed case. After annealing treatment, the contacting area between Ni and Ag interfaces increases resulting in the different enhancement. The thermal effect after Ag deposition will be discussed elsewhere in the presentation which can ensure influence of contacting area between Ni and Ag interfaces.


Keywords: Ag capping layers, magnetic anisotropy enhancement