Low Temperature Growth of Graphene on Glass by Carbon-Enclosed Chemical Vapor Deposition Process and Its Application as Transparent Electrode in Harsh Environment
Yu-Ze Chen1*, Henry Medina1, Hung-Wei Tsai1, Yi-Chung Wang1, Yu-Ting Yen1, Arumugam Manikandan1, Yu-Lun Chueh1
1Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan
* presenting author:Yu-Ze Chen, email:kinorassic@gmail.com
A novel carbon-enclosed chemical vapor deposition (CE-CVD) to grow high quality monolayer graphene on Cu substrate at a low temperature of 500 C was demonstrated. The quality of the grown graphene was investigated by Raman spectra and the detailed growth mechanism of high quality graphene by the CE-CVD process was investigated in detail. In addition to growth of higher quality monolayer graphene, a transparent hybrid few-layer graphene/CuNi mesh electrode directly synthesized by the CE-CVD process on a conventional glass substrate at the temperature of 500 oC was demonstrated, showing excellent electrical properties (~5 / @ 93.5% transparency) and ready to be used for optical applications without further transfer process. The few-layer graphene/CuNi mesh electrode shows no electrical degradation even after 2 hours annealing in pure oxygen at an elevated temperature of ~300 C. Furthermore, the few-layer graphene/CuNi mesh electrode delivers an excellent corrosion resistance in highly corrosive solutions such as electroplating process and achieves a good nucleation rate for the deposited film. Findings suggest that the low temperature few-layer graphene/CuNi mesh electrode synthesized by the CE-CVD process is an excellent candidate to replace Indium tin oxide (ITO) as transparent conductive material (TCM) in the next generation.

Keywords: Graphene, carbon-enclosed chemical vapor deposition, corrosion resistance, transparent conductive material