Novel Nonoelectronics Based on Two Dimensional Materials
YannWen Lan1*
1Nanodevice division, National nano Device Laboratories, Hsinchu, Taiwan
* presenting author:YannWen Lan, email:ywlanblue@gmail.com
The 20th century ushered in the Information Age with the silicon electronics industry’s aggressive and persistent scaling down of the Complementary Metal-Oxide-Semiconductor Field-Effect Transistors’ (MOSFET) dimensions. However, we now face the impending stall of Moore’s Law and must find alternative materials and novel device concepts which may augment commercial silicon technology for enabling high performance and low power consumption. During the last decade, tremendous research efforts have been focused on two-dimensional (2D) materials due to their rich physics and great potentials for many applications. Accordingly, we present some experimental results of 2D materials electronics, including piezoelectric effect, tunnelling field effect transistor, vertical hot electron transistor, spintronics and photodetector. Our results suggest that electronics based on 2D materials could potentially lead to energy generation and low power dissipation for future device applications.

Reference:
1. Qiming Shao*, Guoqiang Yu*, Yann-Wen Lan*, Yumeng Shi, Ming-Yang Li, Cheng Zheng, Xiaodan Zhu, Lain-Jong Li, Pedram Khalili and Kang L. Wang. “Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenides/Ferromagnet Bilayers” Nano Letters, Accepted in November, DOI: 10.1021/acs.nanolett.6b03300, 2016. (Equal first author*, SCI, impact factor:13.592)
2. Yann-Wen Lan*, Carlos M. Torres Jr., Xiaodan Zhu, Chia-Liang Sun, Shuanglin Zhu, Chii-Dong Chen* and Kang L. Wang. “Self-aligned graphene oxide nanoribbon stack with gradient bandgap for visible-light photodetection. Nano energy, 27, 114-120, 2016. (Corresponding author*, SCI, impact factor:11.553)
3. Carlos M. Torres Jr.§, Yann-Wen Lan§,*, Caifu Zeng, Jyun-Hong Chen, Xufeng Kou, Aryan Navabi, Jianshi Tang, Mohammad Montazeri, James R. Adleman, Mitchell B. Lerner, Yuan-Liang Zhong, Lain-Jong Li, Chii-Dong Chen and Kang L. Wang* “ High-current gain two-dimensional MoS2-base hot-electron transistors”. Nano Letters 15, 7905-7912, 2015. (Equal first author§ and Corresponding author*, SCI, impact factor:13.592)
4. Junjie Qi§, Yann-Wen Lan§,*, Adam Stieg, Jyun-Hong Chen, Yuan-Liang Zhong, Lain-Jong Li, Chii-Dong Chen, Yue Zhang*, and Kang Wang*, "Piezoelectric effect in CVD-grown atomic-monolayer triangular MoS2 piezotronics" Nature Communications, 6, pp7430, 2015. (Equal first author§ and Corresponding author*, SCI, impact factor:11.470, Rank: 3/55)
5. Linh-Nam Nguyen, Yann-Wen Lan*, Jyun-Hong Chen, Yuan-Liang Chung, Kuei-Shu Chang-Liao, Lain-Jong Li, and Chii-Dong Chen*. “Resonant tunneling through discrete quantum states in stacked atomic-layered MoS2” Nano Letters, 14(5), pp 2381-2386, 2014. (Corresponding author, SCI, impact factor:13.592)
6. Yann-Wen Lan*,§, Carlos M. Torres Jr.*,§, Shin-Hung Tsai, Xiaodan Zhu, Yumeng Shi, Ming-Yang Li, Lain-Jong Li, Wen-Kuan Yeh and Kang L. Wang*, “Atomic-monolayer MoS2 band-to-band tunneling field-effect transistor” SMALL, Accepted in Aug, doi:10.1002/smll.201601310, 2016. (Corresponding author*, SCI, impact factor:8.32)


Keywords: nonoelectronics, 2D materials , piezoelectric effect, tunnelling field effect transistor, spintronics