Investigation of Photoluminescence Enhancement of Pulsed Laser Ablation Induced Nitrogen-Doped Graphene Oxide Quantum Dots
Svette Reina Merden S. Santiago1*, Tzu-Neng Lin1, Ji-Lin Shen1
1Department of Physics, Chung Yuan Christian University, Zhong Li, Taiwan
* presenting author:Svette Reina Merden Santiago, email:svettesantiago@gmail.com
Optical properties of graphene oxide quantum dots (GOQDs) are greatly influenced by its quantum confinement, defects, edge structures, and functionalization. In this research, we have fabricated GOQDs with tunable nitrogen doping by pulsed laser ablation (PLA) of GO and urea. The transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, ultraviolet-visible (UV-Vis) absorption spectroscopy, and X-ray Photoelectron spectroscopy (XPS) were performed to investigate the effect of nitrogen doping on the photoluminescence (PL) enhancement on GOQDs. The fabricated GOQDs and Nitrogen-doped GOQDs (N-GOQDs) both exhibit blue luminescence with an increasing PL intensity in reference with the increasing dopant concentration. The increase in Pyridinic N and Graphitic N configurations in the lattice of GOQDs implies the origin of the PL enhancement from GOQDs to N-GOQDs. As a result of enhanced PL of N-GOQDs, it indicates possible applications in the fields of optoelectronics, photovoltaics, biomedical imaging and biological sensing.


Keywords: Graphene Oxide Quantum Dots, Nitrogen Doping, Pulsed Laser Ablation