Dynamic Switching of Pzt Epitaxial Films Studied by Afm
Jing-Chen Tseng1*, Yi-Chun Chen1, Chun-Hao Ma2, Ying-Hao Chu2
1Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan
2Department of Material Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
* presenting author:Jing-Cheng Tseng, email:cyes880507@hotmail.com
Pb(Zr0.52Ti0.48)O3 (PZT), which is of the chemical composition on the morphotropic phase boundary of tetragonal and rhombohedral perovskite, has a high piezoelectric coefficient and dielectric constant. However, the piezoelectric coefficient in the thin film is usually lower than that in bulk because of substrate clamping effect. In this study, we investigated the PZT thin film on the mica substrate with small clamping effect. Because the interaction between PZT and mica is Vender Waals force, the strain from the substrate can be effectively reduced. Therefore, the piezoelectric coefficient (d33) of the film on mica is significantly improved. In the experiment, we use the Piezoresponse force microscopy (PFM) to measure the d33 loop. Dynamic measurements of the different variable are studied. Furthermore, the mica substrate is flexible so that we can bend it with different strains to observe the influence of clamping effect.


Keywords: Ferroelectricity, PZT, Clamping Effect, Piezoresponse Force Microscopy