Molecular Dynamics Simulation of Switching Mechanism in Cu/SiO2/Si-based Resistive Random Access Memory
Yu-Li Chen1*, Mon-Shu Ho1, Wen-Jay Lee2
1Department of Physics, National Chung Hsing University, Taichung City, Taiwan
2National Center for High-performance Computing, No.22, Keyuan Rd., Central Taiwan Science Park, Taichung City, Taiwan
* presenting author:Yu-Li Chen,
With the growing popularity of electronic products, non-volatile memory (NVM) has become very important topics in the semiconductor industry. Among many NVM devices, resistive random access memory (RRAM) devices with a simple structure (metal/insulator/metal) are predicted to be the most promising candidate for the next generation non-volatile memory because of their high switching frequency and low operating voltages [1-2]. The resistive random access memories (RRAM) based on metal oxides are widely investigated because of their good compatibility with the CMOS process, multilevel cell capability and potential scalability below 10 nm [3]. The structural features of metal oxide play a crucial role in the switching mechanisms governing RRAM operations, and a comprehensive understanding of the relation between the atomistic properties and final device behavior is still unknown.
We use classical molecular dynamics (MD) simulations to study the structural characteristics and electronic properties of the silicon dioxide. the non-equilibrium molecular dynamics (NEMD) method in conjunction with charge-optimized many-body (COMB) potential was used to study grain boundary in Cu/SiO2/Si-based RRAM. The effects of applied electric field and charge distribution on grain boundary were investigated and the results were correlated with switching oxide defects.
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Keywords: Resistive Random access Memory (RRAM), Molecular dynamics (MD), Silicon dioxide (SiO2)