Defect Engineering for TiON Thin Film: from Schottky Diode to Resistive Switching Memory
Teng-Yu Su1*, Chi-Hsin Huang1, Yu-Chuan Shih,1, Henry Medina1, Jian-Shiou Huang1, Yu-Lun Chueh1
1Materials Science and Engineering, National Tsing-Hua University, Hsinchu, Hsinchu, Taiwan
* presenting author:Teng-Yu Su, email:e2222149@yahoo.com.tw
The role of the defect engineering is essential in the resistive switching memory. The multi-step sputtering deposition to fabricate TiON resistive random access memory (ReRAM) device was demonstrated to modulate defect distribution for the first time. The TiON film with asymmetric defect distribution was fabricated by multi-deposition method and detailed mechanisms were systematically investigated via X-Ray photoelectron spectroscopy (XPS) spectroscopy analysis. The multi-step deposition TiON film shows asymmetric defect distribution, exhibiting a rectifying characteristic as a Schottky diode and a resistive switching behavior as memory depending on the applied voltages. The rectifying properties including a rectifying ratio of 102 at ±1.5V, a forward current of ∼2 mA at 1.5V, turn-on voltage of 1.5V and ideality factor of 4.5 were reported. In addition, comparing to single-step TiON ReRAM device, TiON with gradient defect distribution exhibited more stable switching resistance and better VSET uniformity. The conduction mechanisms and the mechanism of how asymmetric defect distribution affecting resistive was discussed in detail. The results disclosure the possibility of the modulation of defect engineering to demonstrate Schottky diode application and improve ReRAM performance for future 1D1R RRAM applications.


Keywords: Resistive switching, defect engineering, plasma, oxygen vacancy