Stm Study of Ordered Structure Upon Deposition of Germanium on the Silicene/Ag(111)
Han-De Chen1*, Deng-Sung Lin1
1Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
* presenting author:Han-De Chen,
The growth of monolayer silicene on Ag (111) has been a hot research in recent years. The akin structure: Germanene, has also been grown successfully on different substrates. Growth of Ge by molecular beam epitaxy (MBE) on the silicene monolayer on the Ag(111) surface results in either a dispersed adlayer or a two-dimensional (2D) ordered structure depending on the silicene phase. Low-Temperature Scanning tunneling microscopy (LT-STM) images show that the ordered adsorbed Ge atoms on (3 × 3)silicene phase occupy a position similar to the adatoms on the Ge(111)- c(2 × 8) surface. By contrast, no long-range ordering of Ge adatoms is observed on the ( 7 × 7 )siliceneR19.1° phase. Results herein suggest that the deposited Ge atoms tend to form an additional three-dimensional bulk layer on the monolayer silicene/Ag(111) and that the growth of the germanene/silicene heterostructure may not be achieved in a straightforward manner in this system.

Keywords: Silicene, STM