Permanent Ferroelectric Retention of BiFeO3 Mesocrystal
Ying-Hui Hsieh1*, Fei Xue2, Tiannan Yang2, Heng-Jui Liu1, Yuanmin Zhu3,4, Yi-Chun Chen5, Qian Zhan3, Chun-Gang Duan6, Long-Qing Chen2, Qing He7, Ying-Hao Chu1,8
1Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan
2Department of Materials and Engineering, Pennsylvania State University, Pennsylvania, USA
3School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, China
4National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University, Beijing, China
5Department of Physics, National Cheng Kung University, Tainan, Taiwan
6Key Lab of Polar Materials and Devices, East China Normal University, Shanghai, China
7Department of Physics, Durham University, Durham, UK
8Institute of Physics, Academia Sinica, Taipei, Taiwan
* presenting author:Ying-Hui Hsieh, email:joe0203.mse96@g2.nctu.edu.tw
Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention, and fatigue, must be solved prior to the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.


Keywords: Ferroelectric Retention, Mesocrystal